M35080MN Datasheet PDF - ST Microelectronics 8-Kbit Serial SPI Bus EEPROM Specs

M35080MN - 8-Kbit Serial SPI Bus EEPROM

Datasheet Summary

Description

The M35080 device consists of 1024x8 bits of low power EEPROM, fabricated with STMicroelectronics’ proprietary High Endurance Double Polysilicon CMOS technology.

The device is accessed by a simple SPI-compatible serial interface.

Features

of the memory device are summarized in Table 3. The hardware write protection, controlled by the W pin, restricts write access to the Status Register M35080 VSS S W Q 1 2 3 4 8 7 6 5 AI02144B VCC D C NC Note: 1. NC = Not Connected. The memory is organized in pages of 32 bytes. However, the first page is not treated in the same way as the others. Instead, it is considered to consist of sixteen 16-bit incremental registers. Each register can be modified using the conventional write instruction.

Datasheet Details

Part number	M35080MN
Manufacturer	STMicroelectronics
File Size	139.28 KB
Description	8-Kbit Serial SPI Bus EEPROM
Datasheet	M35080MN Datasheet
Additional preview pages of the M35080MN datasheet.

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Full PDF Text Transcription

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M35080 8 Kbit Serial SPI Bus EEPROM With Incremental Registers PRELIMINARY DATA s Compatible with SPI Bus Serial Interface (Positive Clock SPI Modes) Single Supply Voltage: 4.5 V to 5.5 V 5 MHz Clock Rate (maximum) Sixteen 16-bit Incremental Registers BYTE and PAGE WRITE (up to 32 Bytes) (except for the Incremental Registers) Self-Timed Programming Cycle Hardware Protection of the Status Register Resizeable Read-Only EEPROM Area Enhanced ESD Protection 1 Million Erase/Write Cycles (minimum) 40 Year Data Retention (minimum) s s s s 8 1 PSDIP8 (BN) 0.25 mm frame s s s s s s 8 1 SO8 (MN) 150 mil width DESCRIPTION The M35080 device consists of 1024x8 bits of low power EEPROM, fabricated with STMicroelectronics’ proprietary High Endurance Double Polysilicon CMOS technology.

Published: May 2, 2005 |